[institut] Podsecanje, danas je SCL seminar - Branislav Nikolic: What can topological insulators do for spintronics?, petak 16. 8. 2013. u 12:00

Nenad Vukmirovic nenad.vukmirovic at ipb.ac.rs
Fri Aug 16 08:33:53 CEST 2013


Поштоване колегинице и колеге,

Подсећам вас да ће се доле најављени семинар одржати данас.

Срдачан поздрав,

-- 
Др Ненад Вукмировић,
Виши научни сарадник,
Лабораторија за примену рачунара у науци,
Институт за физику Београд,
Србија.
URL: http://www.scl.rs/nenad


On 08/12/2013 12:00 PM, Nenad Vukmirović wrote:
> Поштоване колегинице и колеге,
>
> Позивам вас на СЦЛ семинар који ће у петак 16. августа 2013. године у
> 12:00 у читаоници Института за физику одржати професор Бранислав К.
> Николић (Универзитет у Делаверу, САД). Наслов семинара је:
>
> What can topological insulators do for spintronics?
>
> Abstract: Topological insulators (TIs) are newly discovered class of
> "Dirac" materials which possess an energy gap in the bulk, akin to
> conventional band insulators, while hosting metallic edge [in two
> dimensions (2D)] or surface [in three dimensions (3D)] states. Their the
> low-energy quasiparticles behave as massless Dirac fermions whose spins
> are locked to their momenta due to spin-orbit coupling of the Rashba
> type which is, however, order of magnitude larger than its more familiar
> counterpart in two-dimensional electron gases within semiconductor
> heterostructures. The TIs have attracted considerable attention by the
> basic research communities, because of offering a platform to probe
> exotic particles borrowed from high energy physics (such as axions,
> magnetic monopoles and Majorana fermions), as well as by the applied
> research communities interested in spintronics and quantum computing. In
> this talk I will discuss possible routes to integrate 2D (such as
> graphene with heavy adatoms) or 3D (such as BiSe layered compounds) TIs
> into spintronic heterostructures with ferromagnets (F) that would make
> it possible to test our theoretical predictions for: (i) quantized spin
> and charge pumping in 2DTI/F heterostructures; (ii) spin-transfer torque
> in vertical and lateral 3DTI/F heterostructures; and (iii) spin-Seebeck
> effect in three-terminal 3DTI/F devices.
>



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