[institut] SCL seminar, Marcelo Rozenberg, ponedeljak 9. decembar

[Darko Tanaskovic]

Поштоване колегинице и колеге,

Позивам вас на семинар који ће у понедељак 9. децембра 2013. године у 
15:00 у читаоници
Института за физику да одржи dr Marcelo Rozenberg (Laboratoire de 
Physique des Solides
CNRS - Universite Paris Sud 11)

Наслов семинара је:

Mechanism for resistive switching in transition metal oxides

Resistive random access memories (RRAM) composed of a transition metal 
oxide
dielectric in a capacitor-like structure is a candidate technology for 
next
generation non-volatile memory devices. We introduce a model that 
accounts
for the bipolar resistive switching phenomenom observed in many 
perovskite
transition metal oxides. The numerical study of the model predicts
that strong electric fields develop in the highly resistive 
dielectric-electrode
interfaces, leading to a spatially inhomogeneous oxygen vacancies 
distribution
and a concomitant *memresistive* effect. The theoretical results
qualitatively reproduce non-trivial resistance hysteresis loops 
measured in
cuprate YBCO and manganite PCLMO samples that we also report, providing
key validation to our model. Moreover, we describe a proof of concept 
for a
novel 6-bit multilevel non-volatile memory.


Срдачан поздрав,
Дарко Танасковић

-- 
Institute of Physics Belgrade
Pregrevica 118, 11080 Belgrade, Serbia
http://www.ipb.ac.rs/