[institut] Podsecanje - Seminar: Stanko Nedic, Danas, Sreda, 18 September, 13:00

[Rados Gajic]

Pozdrav, Rados

-------------------------------------------------------------

Postovane koleginice i kolege,

U sredu 18. septembra ce nas sardnik Dr Stanko Nedic da odrzi
seminar pod naslovom:

Zinc oxide nanowire field effect transistors for UV photodetector and 
non-volatile memory applications

Seminar ce biti u biblioteci (Dr Dragan Popovic) Instituta za fiziku 18. 
septembra u 13:00 (cum tempore).

Direktan povod je Stankov izbor u zvanje naucni saradnik na sledecem 
Naucnom vecu.

Mnogo pozdrava svima, Rados.

P.S. Seminar ce biti na engleskom

------------------------------------------------------------------------------------------------------

Dear colleagues,

You are cordially invited to attend a seminar which will be held on 
Wednesday, 18 September 2019 at 13:00 (c.t.) in the library reading room 
"Dr. Dragan Popovic" of the Institute of Physics Belgrade. The talk 
entitled:

Zinc oxide nanowire field effect transistors for UV photodetector and 
non-volatile memory applications

will be given by Dr. Stanko Nedic (currently in the process of becoming 
an assistant research professor at IPB; completed his PhD at the 
Nanoscience Centre of the University of Cambridge).

Abstract of the talk:

Transistor scaling is rapidly reaching its physical limitations and 
alternative device designs at the nanoscale are required for the “after 
Moore” regime. In particular, zinc oxide (ZnO) nanowires (NWs) are 
considered as excellent candidates for future nanoscale building blocks 
with applications ranging from optoelectronics to sensing. 
As-synthesized ZnO NWs are intrinsically n-type doped due to the 
presence of oxygen vacancies and/or zinc interstitials [1, 2]. ZnO NWs 
were reproducibly synthesized by thermal chemical vapor deposition and 
electrical characteristics of different ZnO NW field effect transistor 
(FET) configurations were studied. Parylene C passivated devices 
exhibited low power consumption and excellent field effect mobilities up 
to ~189.2 cm^2/Vs. Time-resolved drain current response to periodic 
ultraviolet illumination was evaluated for conventional and surface 
passivated back-gate ZnO NW FETs. The effects of surface passivation, 
gate voltage bias, temperature, and ambient pressure were examined with 
regard to the photosensitivity, photoconductive gain and the 
photocarrier relaxation dynamics of the ZnO NW FET based photodetectors. 
Non-volatile memory functionality of ZnO NW FETs has been previously 
demonstrated using ferroelectric nanoparticles [3] and mobile protons in 
the gate dielectric layer [4]. High performance ferroelectric 
non-volatile memory devices based on top-gate ZnO NW FETs were 
fabricated on glass substrates by spin coating the ZnO NW channel with a 
200 nm thick poly(vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) 
film acting as a top-gate dielectric [5]. Electrical conductance 
modulation and memory hysteresis are achieved by a gate electric field 
induced reversible electrical polarization switching of the 
ferroelectric thin film. Remarkably, the device exhibited a large memory 
window of ~16.5 V, a high drain current on/off ratio of ~10^5, a gate 
leakage current below ~300 pA, and excellent retention characteristics 
for over 10^4 s.

[1] Chang, P.-C., and Lu, J. G., “ZnO nanowire field-effect 
transistors”, IEEE Transaction on Electron Devices 55, pp. 2977-2987 
(2008).
[2] Goldberger, J., Sirbuly, D. J., Law, M., and Yang, P., “ZnO nanowire 
transistors”, J. Phys. Chem. Lett. B 109, pp. 9-14 (2005).
[3] Sohn, J. I., Choi, S. S., Morris, S., Bendall, J. S., Coles, H. J., 
Hong, W.-K., Jo, G., Lee, T., and Welland, M. E., “Novel nonvolatile 
memory with multibit storage based on a ZnO nanowire transistor”, Nano 
Lett. 10, pp. 4316-4320 (2010).
[4] Yoon, J., Hong, W.-K., Jo, M., Jo, G., Choe, M., Park, W., Sohn, J. 
I., Nedic, S., Hwang, H., Welland, M. E., and Lee, T., “Nonvolatile 
memory functionality of ZnO nanowire transistors controlled by mobile 
protons”, ACS Nano 5, pp. 558-564 (2011).
[5] Nedic, S., Chun, Y. T., Hong, W.-K., Chu, D., and Welland, M. E., 
“High performance non-volatile ferroelectric copolymer memory based on a 
ZnO nanowire transistor fabricated on a transparent substrate”, Appl. 
Phys. Lett. 104, 033101 (2014).


Best regards,
Radoš

---------------------------------------------------------------------------------------

Institute of Physics Belgrade
Pregrevica 118, 11080 Belgrade, Serbia
http://www.ipb.ac.rs/
_______________________________________________
institut mailing list
institut at ipb.ac.rs
https://mail.ipb.ac.rs/mailman/listinfo/institut

-- 
Institute of Physics Belgrade
Pregrevica 118, 11080 Belgrade, Serbia
http://www.ipb.ac.rs/