[institut] Podsecanje, danas je SCL seminar - SiGeSn alloys, Zoran Ikonic, sreda 14. avgust 2013 u 14:00

[Nenad Vukmirović]

Поштоване колегинице и колеге,

Подсећам вас да ће се доле најављени семинар одржати данас.

Срдачан поздрав,

-- 
Др Ненад Вукмировић,
Виши научни сарадник,
Лабораторија за примену рачунара у науци,
Институт за физику Београд,
Србија.
URL: http://www.scl.rs/nenad




-------- Original Message --------
Subject: SCL seminar - SiGeSn alloys, Zoran Ikonic, sreda 14. avgust 
2013 u 14:00
Date: Fri, 09 Aug 2013 10:12:10 +0200
From: Nenad Vukmirović <nenad.vukmirovic at ipb.ac.rs>
To: institut at ipb.ac.rs, institut at ipb.ac.rs, nastavnici at ff.bg.ac.rs, 
fizicari at vinca.rs, scl-all at scl.rs

Поштоване колегинице и колеге,

Позивам вас на СЦЛ семинар који ће у среду 14. августа 2013. године у
14:00 у читаоници Института за физику одржати професор Зоран Иконић
(Факултет за електронику и електротехнику, Универзитет у Лидсу, Велика 
Британија). Наслов семинара је:

Electronic structure and optoelectronic applications of SiGeSn alloys

Abstract:
SiGeSn alloys have emerged as a new class of semiconductor alloys, 
offering a direct band gap in the group IV system and being at the same 
time fully compatible with Si CMOS processing. They enable independent 
variation of band gaps and lattice constant, and can be used in both 
lattice-matched and strained layer structures. With the possibility of 
emission and absorption in the near- and mid-IR range, there is prospect 
of applications for interband and quantum cascade lasers, 
photodetectors, electro-absorption and electro-optic modulators, etc. 
The direct gap – most important for emission – may be brought about by 
alloy composition alone or combined with strain. In the context of group
IV optoelectronics, indirect gap SiGeSn alloys can also serve as barrier 
layers in structures based on GeSn or Ge quantum wells, or for the 
virtual substrate / stressor purposes. Reliable growth of high-quality 
SiGeSn structures has proved quite challenging. With a very small 
equilibrium solubility of Sn, and large lattice mismatch between Sn and 
Ge/Si, the SiGeSn system is metastable and cannot be readily produced in 
bulk form, and heterostructures may suffer from strain relaxation. The 
recent successes in this field pave the way towards materials that 
combine the optical properties of III-Vs and silicon’s low cost 
manufacturability. The present status of theoretical understanding and 
experimental achievements in the development of SiGeSn material for 
optoelectronic applications is reviewed.